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F4B-1/2 Teflon-PCB-Glasstoff-Stoffkupferlaminate

F4B-1/2 Teflon-PCB-Glasstoff-Stoffkupferlaminate

F4B-1/2 Teflon PCB glass fabric copper-clad laminates are designed to meet the stringent electrical performance requirements of microwave circuits. These laminates stand out due to their excellent electrical properties and enhanced mechanical strength, making them ideal for microwave PCB applications.

Technische Spezifikationen

Aussehen

The appearance of these laminates meets the specification requirements set by National and Military Standards for microwave PCB laminates.

Types

Dielektrizitätskonstante

Available Dimensions (mm)

Kupferdicke

Thickness and Tolerance (mm)

Laminate Thickness Toleranz
0.17, 0.25 ±0.025
0.5, 0.8, 1.0 ±0.05
1.5, 2.0 ±0.05
3.0, 4.0, 5.0 ±0.09

The laminate thickness includes the copper thickness. Custom dimensions are available upon request.

Mechanische Stärke

Dicke (mm) Maximum Warp Single Side Double Side
0.25~0.5 0.030 0.050 0.025
0.8~1.0 0.025 0.030 0.020
1.5~2.0 0.020 0.025 0.015
3.0~5.0 0.015 0.020 0.010

Cutting/Punching Strength:

Schalenstärke (1oz copper)

Chemical Properties

These laminates can be chemically etched using standard PCB methods without changing their dielectric properties. Plating through holes is possible but requires sodium treatment or plasma treatment.

Elektrische Eigenschaften

Name Test Condition Einheit Wert
Dichte Normal state g/cm³ 2.2~2.3
Moisture Absorption Dip in distilled water 20±2°C for 24 Std. % ≤0.1
Operating Temperature High-low temperature chamber °C -50~+260
Wärmeleitfähigkeit W/m/k 0.3
CTE (typical) 0~100°C ppm/° C. x:16, y:21 z:186
Shrinkage Factor 2 hours in boiling water % ≤0.0002
Oberflächenwiderstand 500V DC, Normal state M·Ω ≥1*10⁴
Constant humidity and temperature ≥5*10³
Volumenwiderstand Normal state MΩ.cm ≥1*10⁶
Constant humidity and temperature ≥9*10⁴
Pin Resistance 500VDC, Normal state ≥5*10⁴
Constant humidity and temperature ≥5*102
Surface Dielectric Strength Normal state, d=1mm (Kv/mm) ≥1.2
Constant humidity and temperature ≥1.1
Dielektrizitätskonstante 10GHZ, εr 2.55/2.65 (±2%)
Dissipationsfaktor 10GHZ, tgδ ≤1*10⁻³
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