Слепая подложка переходных ИС | HDI PCB для упаковки чипов | УГКПБ

УГКПБ: High-Density Blind Vias IC Substrate for Advanced Semiconductor Packaging

UGPCB’s 8-layer Blind Vias IC Substrate, built with Mitsubishi Gas HF HL832NX material, enables superior signal integrity and high-density interconnects for next-generation chips, featuring 30μm line width and 0.1mm micro vias.

As electronics rapidly evolve toward миниатюризация, более высокая плотность, and enhanced performance, traditional through-hole via technology struggles to meet the demands of modern chip packaging. Blind Via technology has emerged as a critical solution for Взаимодействие высокой плотности (ИЧР) дизайн.

A Blind Via is a conductive hole that connects an outer layer of a PCB to one or more inner layers without passing through the entire board. UGPCB’s 8-Layer Blind Vias IC Substrate, utilizing Mitsubishi Gas HF material, exemplifies this advanced technology, providing a precision, reliable interconnection platform for advanced semiconductor packaging.

Core Product: In-Depth Look at Blind Vias IC Substrates

Blind Via technology defines a specific type of interconnect structure that connects an outer layer to an adjacent inner layer only. Unlike a through-hole via, a blind via starts on the board surface and terminates precisely at a specific inner copper layer.

This structure maximizes usable wiring space by eliminating unnecessary through-board holes, significantly increasing circuit density—a perfect match for the industry’s drive toward smaller form factors and greater integration.

From a technical implementation perspective, the design and fabrication of blind vias adhere to strict standards, such as those outlined in the МПК-6012 qualification and performance specification for rigid печатные платы. They are typically formed using laser drilling processes, creating a tapered hole structure. This allows for precise control over depth and diameter, meeting the stringent requirements of advanced packaging for micro-features and registration accuracy.

Технические спецификации & Design Advantages

The design of UGPCB’s Blind Vias IC Substrate is highly specialized, involving critical considerations from material selection to stack-up architecture.

Key Technical Parameters:

• Модель: Слепая подложка переходных ИС

• Основной материал: Mitsubishi Gas HF (HL832NX) BT Epoxy

• Количество слоев: 8 Слои

• Overall Thickness: 0.6 мм

• Board Dimensions: 40 mm x 55 мм

• Припаяя маска: PSR-4000 AUS308

• Поверхностная отделка: Soft (Electroless Nickel Immersion) Золото

• Minimum Laser Drilled Via Diameter: 0.1 мм

• Minimum Line Width / Космос: 30 мкм / 30 мкм

This substrate employs Japan’s Mitsubishi Gas Chemical HF series BT material (HL832NX), known for excellent dielectric properties (Дк/Дф) и термическая стабильность, making it ideal for high-frequency and high-speed applications. The 30μm fine line technology is critical for connecting high-pin-count chips, в то время как ENIG surface finish provides a flat, wire-bondable, and reliable soldering surface.

Как это работает: Precision Interconnection & Целостность сигнала

The core function of a Blind Vias IC Substrate is to establish efficient, reliable interlayer electrical connections while minimizing real estate consumption—directly addressing modern packaging needs for high density and superior performance.

For signal transmission, blind vias offer distinct advantages over through-hole vias. Through-holes can create unwanted stubs that act as antennae, degrading signal integrity at high frequencies. Слепые исчезновения, connecting only necessary layers, eliminate these non-functional stubs, reducing parasitic capacitance and inductance for cleaner, more stable signal paths.

The fabrication typically uses controlled-depth laser drilling, offering superior precision and consistency for micro-vias compared to mechanical drilling. This is crucial for maintaining high yield and quality in volume production.

Regarding signal integrity, the 30μm line/space design, combined with the optimized dielectric material, allows for precise контроль импеданса, minimizing reflection and loss—a paramount concern for RF and high-speed digital applications.

Types and Classification of Blind Via Structures

Blind via substrates can be categorized based on design architecture and application:

• По структуре: Standard Blind Vias (connecting two adjacent layers) и Stacked Blind Vias (multiple vias aligned vertically across several layers, used for complex, deep interconnects).

• By Location: Слепые исчезновения (from surface to inner layer) и Buried Vias (connecting inner layers only, not exposed on either surface). The combination of these types enables highly complex interconnect routing.

Key Advantages and Differentiating Features

Производственный процесс: A Journey of Precision

The production of a Blind Vias IC Substrate is a precise and multi-step process:

1. Дизайн & Drilling File Generation: Using CAD tools (например, Cadence, Mentor) following IPC-2581 Руководящие принципы. Drill files specify via locations, sizes, and depths.

2. Подготовка материала: Laminating copper foil onto the Mitsubishi HF core material.

3. Лазерное сверление: Using CO₂ or UV lasers to ablate the dielectric and form the micro-vias with precise depth control.

4. Desmearing & Металлизация: Plasma desmearing cleans the via hole, followed by electroless copper deposition to make the hole walls conductive.

5. Pattern Plating & Визуализация: Applying photoresist, exposing, developing, and electroplating to build up circuit traces and via barrels.

6. Ламинирование & Выравнивание слоя: Bonding multiple etched layers with препарат (B-stage) dielectric under heat and pressure. Registration accuracy имеет решающее значение (<±25 μm).

7. Final Processing: Applying solder mask (PSR-4000), обработка поверхности (СОГЛАШАТЬСЯ), and electrical testing.

Основные приложения и варианты использования

Blind Vias IC Substrates are essential in demanding applications:

• Advanced Consumer Electronics: Смартфоны, таблетки, и носимые устройства utilize them for compact motherboard design, connecting application processors, память, and sensors.

• Автомобильная электроника: Critical for ADAS radar modules, информационно -развлекательные системы, and engine control units (КРЫШКА), where reliability under high temperature and vibration is key (aligned with IPC-6012DA for automotive).

• Телекоммуникации: 5G/6G base stations, network switches, и радиочастотные модули rely on them for excellent high-frequency signal integrity and impedance control.

• Высокопроизводительные вычисления (HPC): Серверы, AI/ML accelerators, and GPUs use these substrates for dense, high-speed interconnects between silicon dies and memory.

Partner with UGPCB for your most challenging chip packaging projects. Our expertise in advanced materials like Mitsubishi HF and precision processes such as 30μm line technology and laser-drilled blind vias ensures your designs achieve optimal performance and reliability. Contact our engineering team today for a design review or prototype quote.