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ガラス基板: 高度な半導体パッケージにおける破壊的な革命 - UGPCB

IC基板

ガラス基板: 高度な半導体パッケージにおける破壊的な革命

The Quiet Material Revolution Reshaping Electronics

Intel’s 2024 global debut of glass substrate packaging technology detonated a seismic shift in semiconductor manufacturing. At the 2025 Suzhou TGV Industry Summit, technical leaders from Intel, TSMC, and Samsung concurred: Glass substrates will drive semiconductor packaging into a ‘transparent era,’ with market penetration exceeding 50% within five years. This analysis explores the technological rationale, industrial chain transformation, and implications for プリント基板 industries.

ガラス基板

1. Technical Superiority: Why Glass Substrates Redefine Packaging

1.1 Physical Property Dominance

Comparative analysis reveals glass substratesoverwhelming advantages :

パラメーター Organic Substrates Silicon Interposers ガラス基板
誘電率 4.2-4.8 11.9 3.9
損失の接線 0.02-0.04 0.001-0.01 0.0001-0.001
CTE (ppm/°C) 16-18 2.6 3.2-7.5 (tunable)
熱伝導率 0.2-0.3 150 1.1
Surface Roughness 0.5-1.0 μm 0.05 μm <0.01 μm

(Source: Intel Technical White Paper, Corning Materials Lab)

Signal Loss Equation Analysis
Attenuation (α) is defined as:

With ε’≈3.9 and ε≈0.001 for glass substrates, 高周波 (100GHz) losses reduce by 67% versus organic substrates (ε’≈4.5, ε≈0.03).

1.2 Exponential Density Enhancement

NVIDIA’s GB200 GPU demonstrates 50%+ die count increase using glass substrates, achieving 5μm/5μm wiring density through:

  • Atomic-level flatness (<0.01μm roughness)

  • Tunable CTE matching (3ppm/°C)

  • Mechanical stability (700×700mm panel warpage <50μm)

2. Process Innovations: Industrializing TGV Technology

2.1 Through-Glass-Via Manufacturing Breakthroughs

Titanrise Tech’s laser modification achieves 8,000 vias/sec at ±5μm precision (3a), 160× faster than conventional methods. Key steps:

  1. Picosecond Laser Modification: Creates micron-scale altered zones

  2. HF Etching: Achieves 100:1 aspect ratio

  3. Metallization: PVD sputtering + 電気めっき (>15MPa adhesion)

Through-Glass Via (TGV) Process Flowchart

2.2 Metallization Advancements

Four technical routes address glass adhesion:

  1. Electroless Cu + マイクロエッチング (AKM Solutions)

  2. Nano-Ag Paste + LT Sintering (Wintech Patent)

  3. Plasma Grafting (IME-CAS Technology)

  4. PVD Ti/Cu Stack (Titanrise Standard)

その中で, UGPCB has invested heavily in introducing the DEP600 equipment, which adopts high aspect ratio sputtering technology, achieving 95% coverage in 10:1 hole profiles, with a metal resistivity of less than 2.5 μΩ·cm, reaching an internationally leading level.

3. Industry Landscape: Global Competition Intensifies

3.1 Market Growth Projections

Prismark forecasts explosive expansion:

  • 2025: $916m (TGV substrates)

  • 2030: $4.2B (full applications)

  • 2035: $11.3B (entire ecosystem)

Trend Chart of Glass Substrate Market Demand from 2025 に 2035

3.2 Geopolitical Tech Race

  • アメリカ合衆国: Intel standards + Corning supply dominance

  • Korea: Samsung’sGlass Alliance” + SKC’s 9-layer stacks

  • 中国: Wintech/AKM mass production + JFE 2026 localization

4. Challenges & ソリューション: Commercialization Hurdles

4.1 Cost Reduction Pathways

Current 3-5× cost premium vs traditional substrates will plummet through:

  • 85% large-panel (>2) utilization

  • 90% laser drilling cost reduction

  • Metallization yield improvement (60%→92%)

4.2 Reliability Certification

New standards required:

  • Thermal Cycling (-55°C–250°C, 1,000 サイクル)

  • EM Lifetime (MTTF >10⁷ hours @ JEP154)

  • High-Frequency Stability (<0.5dB/cm @100GHz)

Glass Substrate Packaging

5. PCB Industry Implications: Threat vs Opportunity

5.1 Market Disruption

  • 30% HDI/基板 replacement risk

  • Hybrid (glass+resin) substrate opportunities

5.2 Technology Synergies

  • Picosecond laser drilling adoption

  • PVD-enhanced HDI trace precision

  • Optical inspection <0.1μm resolution

結論: Transparent Substrates, Opaque Futures

China now leads critical TGV sectors (装置, testing, 材料). As Intel’s Pat Gelsinger notes: Material innovation becomes the new Moore’s Law at atomic scales. This glass-driven revolution may unlock semiconductor’s second growth curve.

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