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Проектирование IC Substrate - УГКПБ

Проектирование IC Substrate

Проектирование IC Substrate

Breaking Limits: Inside UGPCB’s Cutting-Edge IC Substrate Design Capabilities

In an era of explosive AI computing power and 5G/6G bandwidth expansion, fingernail-sized chips now integrate billions of transistors. Еще 60% of high-end chip failures stem not from silicon wafers themselves, but from defects in their critical carrier – the Подложка ИС. This startling statistic underscores the extreme importance of substrate design.

IC субстраты: The Invisible Foundation of Chip Performance

IC substrates are far more than simple connectors; they serve as the neural hub and power core between chips and the external world. With I/O counts surging to thousands (even 10,000+ for advanced GPUs/CPUs), trace widths/spacing shrinking below 15μm/15μm, and signal speeds exceeding 112Gbps, design precision now operates at nanometer scales. Thermal management failures and signal integrity degradation have become top killers in advanced packaging (2.5D/3D IC, Chiplet).

Key Formula: Impedance Control Accuracy (З)
Z = (87 / √εr) × ln(5.98H / (0.8W + T))
Where εr = dielectric constant, H = dielectric thickness, W = trace width, T = copper thickness. UGPCB precisely controls these parameters to achieve ±5% impedance tolerance – surpassing the industry standard of ±10%.

Cross-section of HDI substrate with microvias

Deconstructing UGPCB’s 5 Core IC Substrate Design Capabilities

1. Extreme High-Density Interconnect (ИЧР) Дизайн

  • Microvia Mastery: Лазерное бурение (<50мкм) and advanced plating enable any-layer HDI. Boosts routing channels by 40% in 0.2mm pitch BGA designs.

  • Ultra-Fine Line Breakthrough: Mass production of 12μm/12μm traces meets cutting-edge Chiplet requirements.

  • Advanced Stackups: Expertise in 16+ layer designs with hybrid materials (low-Dk/Df + high-Tg) for heterogeneous integration.

2. Nanoscale Signal/Power Integrity (SI/PI) Control

  • 3D EM Simulation: Ansys HFSS and Cadence Sigrity eliminate reflections/crosstalk in 112G PAM4 channels.

  • PDN Optimization: Distributed decoupling networks reduce power supply noise (PSN) к 60%.

  • Loss Control: Ultra-low-profile copper (RTF/VLP) combined with impedance formula adherence minimizes insertion loss.

3. Thermal-Mechanical Reliability (TMV) Engineering

  • CTE Matching: Innovative материалы minimize warpage (<0.1%) by balancing chip (~2.6 ppm/°C) and substrate CTE (14-17 ppm/° C.).

  • Multiphysics Simulation: COMSOL predicts solder joint fatigue during thermal cycling.

  • Thermal Architecture: Embedded heat pipes + >5 W/mK TIMs + optimized thermal vias boost system cooling.

4. Advanced Co-Design Packaging

  • Fab/OSAT Collaboration: Early DFM integration for FCBGA, WLP, and Si interposer processes.

  • Chiplet Expertise: UCIe-compliant high-bandwidth, low-latency interconnects.

  • Материальная наука: Strategic use of Ajinomoto ABF, MEGTRON series for RF/thermal/reliability needs.

5. DFM/DFT-Driven Design

  • Manufacturability Built-In: Design rules aligned with process capabilities maximize first-pass yield (FPY).

  • Testability Optimization: ATE-friendly test point layouts for complex substrates.

  • Design for Yield (DFY): Copper balancing and etch compensation improve production consistency.

UGPCB Success Story: From Design to Mass Production

Случай: High-Power AI Accelerator FCBGA Substrate

  • Испытание: 45×45mm die, >800W power, 56Gbps PAM4 signals requiring extreme thermal/electrical performance.

  • Решение:

    • 16-layer any-layer ИЧР with 12μm/12μm traces

    • ТРОН МЕНЯ 7 основной (εr=3.3, Df=0.001) + precision impedance control

    • Embedded copper blocks + micro-via arrays (35% thermal resistance reduction)

    • Co-design with OSAT for bump/route optimization

  • Результат: Passed SI/PI/thermal validation first-time, 98.5% урожай, 6-month faster time-to-market.

Thermal simulation of FCBGA substrate

Why Global Leaders Choose UGPCB as Their IC Substrate Partner

С 100+ expert engineers, 300+ annual IC substrate designs, 20+ patents, and multimillion-dollar simulation labs, УГКПБ доставляет:

Key Differentiators

  • Технологическое лидерство: Defining next-gen substrate boundaries through R&Дюймовый.

  • End-to-End Solutions: Design → Prototype → Volume production under one roof.

  • Manufacturing Certainty: In-house advanced fabs ensure design intent realization.

  • 24/7 Responsiveness: Dedicated support teams with instant quotes.

Unlock Your Chip’s Full Potential Today!

Is your next-gen flagship chip limited by substrate bottlenecks? UGPCB’s experts are ready to provide:
Free IC Substrate Design Feasibility Assessment
Competitive PCBA Solution Quotes in 24 Hours

[Contact UGPCB’s IC Substrate Experts Now for Instant Support & Quote]

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